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参数资料
| 型号： | MRF6S20010NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN |
| 文件页数： | 1/27页 |
| 文件大小： | 687K |
| 代理商： | MRF6S20010NR1 |
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1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ =
130 mA, Pout = 10 Watts PEP
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — -34 dBc
Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA,
Pout = 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — -47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -49 dBc in 3.84 MHz Channel Bandwidth
Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =
130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930-1990 MHz),
IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency— 16%
ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout =
4 Watts Avg., Full Frequency Band (1805-1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6S20010N
Rev. 3, 6/2009
Freescale Semiconductor
Technical Data
1600-2200 MHz, 10 W, 28 V
GSM, GSM EDGE
SINGLE N-CDMA
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF6S20010NR1
MRF6S20010GNR1
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
MRF6S20010NR1
CASE 1265A-03, STYLE 1
TO-270-2 GULL
PLASTIC
MRF6S20010GNR1
Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S20010NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR3 | 功能描述:射频MOSFET电源晶体管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21050LR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR5 | 功能描述:射频MOSFET电源晶体管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21050LS | 制造商:Freescale Semiconductor 功能描述: |
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