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| 型号： | MRF6S21100NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 14/20页 |
| 文件大小： | 1456K |
| 描述： | MOSFET RF N-CH 28V 23W TO272-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.05A |
| 功率 - 输出： | 23W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 带卷 (TR) |
MRF6S21100NR1 MRF6S21100NBR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic
Z7 0.259″
x 0.880″
Microstrip
Z8 0.215″
x 0.230″
Microstrip
Z9 0.787″
x 0.084″
Microstrip
Z11, Z12 1.171″
x 0.120″
Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030″,
εr
=2.5
Z1, Z10 0.743″
x 0.084″
Microstrip
Z2 0.893″
x 0.084″
Microstrip
Z3 0.175″
x 0.084″
Microstrip
Z4 0.420″
x 0.800″
Microstrip
Z5 1.231″
x 0.040″
Microstrip
Z6 0.100″
x 0.880″
Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C2
C3
C4
C5
C6
R1
Z1
Z2
Z3
C7
Z7
C9
Z8
Z6
R2
Z5
Z4
Z9
Z10
Z12
Z11
VSUPPLY
C10
C11
C12
+
B1
R3
C8
Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
25008051107Y0
Fair--Rite
C1
10
μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
0.01
μF Chip Capacitor
C1825C103J1GAC
Kemet
C3, C4, C10
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C5, C6, C11, C12
10
μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
10 pF Chip Capacitor
ATC100B100BT500XT
ATC
C8
1.1 pF Chip Capacitor
ATC100B1R1BT500XT
ATC
C9
5.1 pF Chip Capacitor (MRF6S21100NR1)
8.2 pF Chip Capacitor (MRF6S21100NBR1)
ATC100B5R1BT500XT
ATC100B8R2BT500XT
ATC
ATC
R1
1k?, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 k?, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10
?,
1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S21100NR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 23W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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