- 您现在的位置：买卖IC网 > PDF目录21718 > MRF6V12250HR5 (Freescale Semiconductor)MOSFET RF N-CH 250W 50V NI-780 PDF资料下载
参数资料
| 型号： | MRF6V12250HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 630K |
| 描述： | MOSFET RF N-CH 250W 50V NI-780 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 1.03GHz |
| 增益： | 20.3dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 100mA |
| 功率 - 输出： | 275W |
| 电压 - 额定： | 100V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 标准包装 |
| 其它名称： | MRF6V12250HR5DKR |
MRF6V10250HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 1030 and 1090 MHz, 1% to 20% duty
cycle. This device is suitable for
use in pulsed applications.
?
Typical Pulsed Performance: VDD
=50Volts,IDQ
= 250 mA,
Pout
= 250 Watts Peak (25 W Avg.), f = 1090 MHz, Pulse Width = 100
μsec,
Duty Cycle = 10%
Power Gain ? 21 dB
Drain Efficiency ? 60%
?
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak
Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +100
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 250 W Pulsed, 100
μsec Pulse Width, 10% Duty Cycle
ZθJC
0.10
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF6V10250HS
Rev. 2, 4/2010
Freescale Semiconductor
Technical Data
1090 MHz, 250 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
MRF6V10250HSR3
CASE 465A--06, STYLE 1
NI--780S
?
Freescale Semiconductor, Inc., 2008, 2010.
All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| DME1P56K-F | CAP FILM 0.56UF 100VDC RADIAL |
| FCD7N60TM_WS | MOSFET N-CH 600V 7A DPAK |
| 160474K250H | CAP FILM 0.47UF 250VDC RADIAL |
| DME1W1P2K | CAP FILM 1.2UF 100VDC RADIAL |
| 160824J63F-F | CAP FILM 0.82UF 63VDC RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V12250HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12250HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12500H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V12500HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12500HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
发布紧急采购，3分钟左右您将得到回复。