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参数资料
| 型号： | MRF6V2010NB |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | PLASTIC, ROHS COMPLIANT, CASE 1337-03, 2 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 299K |
| 代理商： | MRF6V2010NB |
MRF6V2010N MRF6V2010NB
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for pulsed wideband large - signal output and driver
applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 35 mA,
Pout = 10 Watts
Power Gain — 25 dB
Drain Efficiency — 64%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
Integrated ESD Protection
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
225°C Capable Plastic Package
RoHS Compliant
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +110
Vdc
Gate-Source Voltage
VGS
-0.5, +10
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
RθJC
TBD
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
TBD (Minimum)
Machine Model (per EIA/JESD22-A115)
TBD (Minimum)
Charge Device Model (per JESD22-C101)
TBD (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Document Number: Order from RF Marketing
Rev. 4, 12/2006
Freescale Semiconductor
Technical Data
10-450 MHz, 10 W, 50 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6V2010N
MRF6V2010NB
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6V2010N
PREPRODUCTION
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF6V2010NB
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2010NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO272-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2010 Series 450 MHz 10 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2010NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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