- 您现在的位置：买卖IC网 > PDF目录97627 > MRF6V2150NB (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA PDF资料下载
参数资料
| 型号： | MRF6V2150NB |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | PLASTIC, ROHS COMPLIANT, WB-4, CASE 1484-04, 4 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 205K |
| 代理商： | MRF6V2150NB |
MRF6V2150N MRF6V2150NB
1
RF Device Data
Freescale Semiconductor
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for wideband large-signal output and driver applications
with frequencies up to 450 MHz. Devices are unmatched and are suitable for
use in industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain — 25.5 dB
Drain Efficiency — 68%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts
Output Power
Integrated ESD Protection
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
225°C Capable Plastic Package
RoHS Compliant
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5 +110
Vdc
Gate-Source Voltage
VGS
- 0.5 +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
RθJC
TBD
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Document Number: Order from RF Marketing
Rev. 7, 12/2006
Freescale Semiconductor
Technical Data
MRF6V2150N
MRF6V2150NB
10-450 MHz, 150 W, 50 V
LATERAL N-CHANNEL
SINGLE-ENDED
BROADBAND
RF POWER MOSFETs
PREPRODUCTION
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6V2300NB
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6V2300N
PARTS ARE SINGLE-ENDED
Freescale Semiconductor, Inc., 2006. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6V2300N | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF6V2300NB | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF6V2300NBR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF754 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF8372 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2150NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 150W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2150NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 150W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2150NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2150 Series 10 - 450 MHz 150 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2150NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 150W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2150NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
发布紧急采购，3分钟左右您将得到回复。