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| 型号： | MRF6V2150NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/18页 |
| 文件大小： | 1492K |
| 描述： | MOSFET RF N-CH TO-272-4 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 220MHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 450mA |
| 功率 - 输出： | 150W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 标准包装 |
| 其它名称： | MRF6V2150NBR1DKR |
MRF6V2150NR1 MRF6V2150NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field--Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
?
Typical CW Performance at 220 MHz: VDD
=50Volts,IDQ
= 450 mA,
Pout
= 150 Watts
Power Gain ? 25 dB
Drain Efficiency ? 68.3%
?
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
225°C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
-- 0.5, +110
Vdc
Gate--Source Voltage
VGS
-- 0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
RθJC
0.24
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V2150N
Rev. 4, 4/2010
Freescale Semiconductor
Technical Data
MRF6V2150NR1
MRF6V2150NBR1
10--450 MHz, 150 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V2150NBR1
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6V2150NR1
PARTS ARE SINGLE--ENDED
(Top View)
RFout/VDS
Figure 1. Pin Connections
RFout/VDS
RFin/VGS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
?
Freescale Semiconductor, Inc., 2007--2008, 2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
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| MRF6V2150NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 150W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2150NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2150 Series 10 - 450 MHz 150 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2150NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 150W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2150NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2150NR1-CUT TAPE | 制造商:Freescale 功能描述:RF POWER MOSFET 10-450 MHz, 150 W, 50 V |
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