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| 型号： | MRF6VP41KHR7 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/19页 |
| 文件大小： | 1288K |
| 描述： | MOSFET RF N-CH 50V NI-1230 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 450MHz |
| 增益： | 20dB |
| 电压 - 测试： | 50V |
| 额定电流： | 5mA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 其它名称： | MRF6VP41KHR7DKR |
MRF6VP41KHR6 MRF6VP41KHSR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for pulse and CW wideband applications with frequencies up to
500 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
?
Typical Pulse Performance at 450 MHz: VDD
=50Volts,IDQ
= 150 mA,
Pout
= 1000 Watts Peak (200 W Avg.), Pulse Width = 100
μsec,
Duty Cycle = 20%
Power Gain ? 20 dB
Drain Efficiency ? 64%
?
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
CW Operation Capability with Adequate Cooling
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Designed for Push--Pull Operation
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
-- 6 , + 1 0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Total Device Dissipation @ TC
=25°C, CW only
(3)
PD
1333
W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation.
Document Number: MRF6VP41KH
Rev. 6, 4/2012
Freescale Semiconductor
Technical Data
MRF6VP41KHR6
MRF6VP41KHSR6
10--500 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF6VP41KHR6
PARTS ARE PUSH--PULL
(Top View)
GSA
31RFoutA/VDSA
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
Figure 1. Pin Connections
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP41KHSR6
?
Freescale Semiconductor, Inc., 2008--2010, 2012.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP41KHR7 | 制造商:Freescale Semiconductor 功能描述:RF POWER FET N CH 110V 375D-05 |
| MRF6VP41KHR7-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP41KH Series 10 - 500 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP41KHSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ1000W NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ1000W NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHSR7 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ1000W NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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