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| 型号： | MRF7S18170HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/18页 |
| 文件大小： | 934K |
| 描述： | TRANSISTOR RF LDMOS NI-880 |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.81GHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 50W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880 |
| 供应商设备封装： | NI-880 |
| 包装： | 带卷 (TR) |
MRF7S18170HR3 MRF7S18170HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1805 to
1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN--PCS/cellular radio and WLL
applications.
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
1400 mA, Pout
= 50 Watts Avg., f = 1807.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain ? 17.5 dB
Drain Efficiency ? 31%
Device Output Signal PAR ? 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset ? --37 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW
Output Power
?
Pout
@ 1 dB Compression Point
?
170 Watts CW
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
Designed for Digital Predistortion Error Correction Systems
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 84°C, 170 W CW
Case Temperature 79°C, 50 W CW
RθJC
0.27
0.30
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF7S18170H
Rev. 2, 3/2011
Freescale Semiconductor
Technical Data
MRF7S18170HR3
MRF7S18170HSR3
1805--1880 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--02, STYLE 1
NI--880S
MRF7S18170HSR3
CASE 465B--03, STYLE 1
NI--880
MRF7S18170HR3
?
Freescale Semiconductor, Inc., 2006, 2008, 2011.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S18170HR5 | 功能描述:射频MOSFET电源晶体管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18170HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18170HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19080HR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19080HR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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