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参数资料
| 型号： | MRF7S19120NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1730-02, WBL-4, 4 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 512K |
| 代理商： | MRF7S19120NR1 |
MRF7S19120NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
1200 mA, Pout = 36 Watts Avg., Full Frequency Band, IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — -38.5 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW
Output Power
Pout @ 1 dB Compression Point w 120 W CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81
°C, 120 W CW
Case Temperature 80
°C, 36 W CW
RθJC
0.43
0.51
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S19120N
Rev. 2, 12/2009
Freescale Semiconductor
Technical Data
MRF7S19120NR1
1930-1990 MHz, 36 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 1730-02
TO-270 WBL-4
PLASTIC
Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S19120NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF7S19170HR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19170HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19170HR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19170HS | 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述: |
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