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参数资料
| 型号： | MRF7S21110HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/15页 |
| 文件大小： | 742K |
| 描述： | MOSFET RF N-CH 33W NI-780S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 17.3dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.1A |
| 功率 - 输出： | 33W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
14
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
?
Initial Release of Data Sheet
1
July 2008
?
Added Input Signal in front of PAR for consistency throughout data sheet p. 2, 6, 7, 8
?
Corrected Table 4, Typical Performances, Output Power Variation over Temperature value from 0.276 to
0.028, p. 3
?
Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent
production test signal, p. 8
2
Mar. 2011
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
?
Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device?s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
?
Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S21110HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 33W WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21150HR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21150HR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21150HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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