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| 型号： | MRF7S21150HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/13页 |
| 文件大小： | 438K |
| 描述： | MOSFET RF N-CH 44W NI-780 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.35A |
| 功率 - 输出： | 44W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
MRF7S21150HR3 MRF7S21150HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
?
Typical Single-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
=
1350 mA, Pout
= 44 Watts Avg., Full Frequency Band, IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Power Gain ? 17.5 dB
Drain Efficiency ? 31%
Device Output Signal PAR ? 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset ? -37 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW
Output Power
?
Pout
@ 1 dB Compression Point
150 Watts CW
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
?
Designed for Digital Predistortion Error Correction Systems
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 147 W CW
Case Temperature 75°C, 45 W CW
RθJC
0.33
0.37
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF7S21150HR3
MRF7S21150HSR3
2110-2170 MHz, 44 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF7S21150HR3
CASE 465A-06, STYLE 1
NI-780S
MRF7S21150HSR3
Document Number: MRF7S21150H
Rev. 1, 4/2009
Freescale Semiconductor
Technical Data
?
Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
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相关代理商/技术参数 |
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|---|---|
| MRF7S21150HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21150HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21170HR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21170HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21170HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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