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参数资料
| 型号： | MRF858S |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 319A-02, 6 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 105K |
| 代理商： | MRF858S |
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MRF858S
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800–960 MHz.
Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics
Output Power = 3.6 Watts CW
Minimum Power Gain = 11 dB
Minimum ITO = +44.5 dBm
Typical Noise Figure = 6 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800–960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 0.85 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
55
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Total Device Dissipation @ TC = 50°C
Derate above 50
°C
PD
20
0.138
Watts
W/
°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance (TJ = 150°C, TC = 50°C)
RθJC
6.9
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
V(BR)CEO
28
35
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
V(BR)CES
55
85
—
Vdc
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
V(BR)CBO
55
85
—
Vdc
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
V(BR)EBO
4
5
—
Vdc
Collector Cutoff Current (VCB = 24 V, IE = 0)
ICES
—
1
mA
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Order this document
by MRF858S/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF858S
CLASS A
800–960 MHz
3.6 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319A–02, STYLE 2
Motorola, Inc. 1998
REV 3
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相关代理商/技术参数 |
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| MRF859 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF859S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF890 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF890_07 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF891 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTORS NPN SILICON |
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