- 您现在的位置：买卖IC网 > PDF目录378675 > MRF859 (MOTOROLA INC) 64K SERIAL CONFIGURATION PROM PDF资料下载
参数资料
| 型号： | MRF859 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 64K SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 155K |
| 代理商： | MRF859 |
1
MRF859 MRF859S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 to 960 MHz.
Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics
Output Power = 6.5 Watts CW
Minimum Power Gain = 11.5 dB
Minimum ITO = +47 dBm
Typical Noise Figure = 6 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 to 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 2 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit Board Photomaster Available by Ordering Document MRF859PHT/D
from Motorola Literature Distribution.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD
30
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
4
Vdc
Total Device Dissipation @ TC = 60
°
C
Derate above 60
°
C
34
0.24
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance (TJ = 150
°
C, TC = 60
°
C)
R
θ
JC
3.9
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
Collector Cutoff Current (VCB = 15 V, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
28
32
—
Vdc
55
75
—
Vdc
55
75
—
Vdc
4
5
—
Vdc
—
—
2
mA
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Order this document
by MRF859/D
SEMICONDUCTOR TECHNICAL DATA
CLASS A
800–960 MHz
6.5 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF859
CASE 319A–02, STYLE 2
MRF859S
REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| MRF859S | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| MRF897R | RF POWER TRANSISTOR NPN SILICON |
| MRF897 | RF POWER TRANSISTOR NPN SILICON |
| MRF898 | RF POWER TRANSISTOR NPN SILICON |
| MRF899 | RF POWER TRANSISTOR NPN SILICON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF859S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF890 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF890_07 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF891 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTORS NPN SILICON |
| MRF891S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTORS NPN SILICON |
发布紧急采购，3分钟左右您将得到回复。