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| 型号： | MRF8P20140WHR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件页数： | 1/15页 |
| 文件大小： | 607K |
| 代理商： | MRF8P20140WHR3 |
MRF8P20140WHR3 MRF8P20140WHSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28 Volts,
IDQA = 500 mA, VGSB =1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.0
42.8
8.0
--31.0
1920 MHz
16.0
43.7
8.1
--32.6
2025 MHz
15.9
42.0
8.1
--31.2
Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point
170 Watts (1,2)
Features
Designed for Wide Instantaneous Bandwidth Applications. VBWres
240 MHz.
Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
125
°C
Operating Junction Temperature (3)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
140
0.66
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
Document Number: MRF8P20140WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
1880--2025 MHz, 24 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20140WHR3
MRF8P20140WHSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20140WHSR3
CASE 465M--01, STYLE 1
NI--780--4
MRF8P20140WHR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Freescale Semiconductor, Inc., 2011. All rights reserved.
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相关代理商/技术参数 |
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| MRF8P20140WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20140WHSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20140WHSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20160HR3 | 功能描述:DISCRETE RF FET RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF8P20160HR5 | 功能描述:DISCRETE RF FET RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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