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| 型号： | MRF8P20165WHR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 738K |
| 描述： | FET RF LDMOS 28V 550MA NI780-4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.98GHz ~ 2.01GHz |
| 增益： | 14.8dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 550mA |
| 功率 - 输出： | 37W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780-4 |
| 供应商设备封装： | NI-780-4 |
| 包装： | 带卷 (TR) |
MRF8P20165WHR3 MRF8P20165WHSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
?
Typical Doherty Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQA
= 550 mA, VGSB
=1.3Vdc,Pout
= 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
16.1
47.0
7.1
--27.7
1960 MHz
16.3
47.7
7.1
--29.7
1995 MHz
16.3
46.0
7.0
--33.3
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
(1)
?
Typical Pout
@ 3 dB Compression Point
?
190 Watts
Features
?
Designed for Wide Instantaneous Bandwidth Applications. VBWres
?
100 MHz.
?
Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
?
Production Tested in a Symmetrical Doherty Configuration
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
Designed for Digital Predistortion Error Correction Systems
?
RoHS Compliant
?
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
?
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
125
°C
Operating Junction Temperature
(2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 37 W CW, 28 Vdc, IDQA
= 550 mA, VGSB
= 1.3 Vdc, 1960 MHz
Case Temperature 114°C, 160 W CW, 28 Vdc, IDQA
= 550 mA, VGSB
= 1.3 Vdc, 1960 MHz
RθJC
0.79
0.53
°C/W
1. P3dB = Pavg
+ 7.0 dB where Pavg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8P20165WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
1930--1995 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20165WHR3
MRF8P20165WHSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20165WHSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20165WHR3
(Top View)
GSA
31RFoutA/VDSA
Figure 1. Pin Connections
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
?
Freescale Semiconductor, Inc., 2011.
All rights reserved.
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| MRF8P20165WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20165WHSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20165WHSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HR3 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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