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参数资料
| 型号： | MRF8P20165WHSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件页数： | 1/16页 |
| 文件大小： | 738K |
| 代理商： | MRF8P20165WHSR3 |
MRF8P20165WHR3 MRF8P20165WHSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28 Volts,
IDQA = 550 mA, VGSB =1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
16.1
47.0
7.1
--27.7
1960 MHz
16.3
47.7
7.1
--29.7
1995 MHz
16.3
46.0
7.0
--33.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point
190 Watts (1)
Features
Designed for Wide Instantaneous Bandwidth Applications. VBWres
100 MHz.
Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
125
°C
Operating Junction Temperature (2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz
Case Temperature 114°C, 160 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz
RθJC
0.79
0.53
°C/W
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8P20165WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
1930--1995 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20165WHR3
MRF8P20165WHSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20165WHSR3
CASE 465M--01, STYLE 1
NI--780--4
MRF8P20165WHR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Freescale Semiconductor, Inc., 2011. All rights reserved.
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| MRF8P20165WHSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HR3 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HSR3 | 功能描述:射频MOSFET电源晶体管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HSR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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