- 您现在的位置：买卖IC网 > Datasheet目录94 > MRF8P23080HSR3 (Freescale Semiconductor)FET RF N-CH 2.3GHZ 28V NI780S-4 Datasheet资料下载
参数资料
| 型号： | MRF8P23080HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/15页 |
| 文件大小： | 645K |
| 描述： | FET RF N-CH 2.3GHZ 28V NI780S-4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.3GHz |
| 增益： | 14.6dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 280mA |
| 功率 - 输出： | 16W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780HS-4 |
| 供应商设备封装： | NI-780HS-4 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 72°C, 16 W CW, 28 Vdc, IDQA
= 280 mA, VGSB
= 0.7 V, 2300 MHz
(3),28Vdc,IDQA
= 280 mA, VGSB
= 0.7 V, 2300 MHz
Case Temperature 80°C, 80 W CW
RθJC
0.89
0.55
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
(4)
Gate Threshold Voltage
(VDS
=10Vdc,ID
=75μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,IDA
= 280 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=0.75Adc)
VDS(on)
0.1
0.23
0.3
Vdc
Functional Tests
(5,6)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 280 mA, VGSB
=0.7Vdc,Pout
=16WAvg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ
Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
on 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
13.5
14.6
18.5
dB
Drain Efficiency
ηD
38.0
42.0
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.0
6.7
?
dB
Adjacent Channel Power Ratio
ACPR
?
--29.5
--27.0
dBc
Typical Broadband Performance
(6)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 280 mA, VGSB
=0.7Vdc,
Pout
= 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
14.6
42.0
6.7
--29.5
2350 MHz
14.7
41.6
6.8
--31.5
2400 MHz
14.6
41.4
6.6
--32.5
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See
CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration (continued)
相关PDF资料 |
PDF描述 |
|---|---|
| MRF8P9040GNR1 | IC MOSFET RF N-CHAN TO-270 |
| MRF8P9300HSR6 | FET RF N-CH 960MHZ 70V NI-1230HS |
| MRF8S18120HR5 | MOSFET RF N-CH 120W NI-780 |
| MRF8S18260HSR6 | MOSFET RF N-CH 260W NI1230S-8 |
| MRF8S19140HSR3 | FET RF N-CH 1960MHZ 28V NI780HS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P23080HSR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。