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参数资料
| 型号： | MRF8P29300HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 15/16页 |
| 文件大小： | 1010K |
| 代理商： | MRF8P29300HR6 |
8
RF Device Data
Freescale Semiconductor
MRF8P29300HR6 MRF8P29300HSR6
Zo =10
Zload
Zsource
f = 2700 MHz
f = 2900 MHz
f = 2700 MHz
VDD =30 Vdc,IDQ = 100 mA, Pout = 320 W Peak
f
MHz
Zsource
Zload
2700
4.7 -- j2.0
7.8 -- j1.0
2800
4.7 -- j1.7
8.7 -- j0.2
2900
4.7 -- j1.5
9.4 -- j0.7
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 13. Series Equivalent Source and Load Impedance
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
+
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相关代理商/技术参数 |
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| MRF8P29300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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