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| 型号： | MRF8P29300HSR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN |
| 文件页数： | 16/16页 |
| 文件大小： | 1010K |
| 代理商： | MRF8P29300HSR5 |
MRF8P29300HR6 MRF8P29300HSR6
9
RF Device Data
Freescale Semiconductor
Figure 14. MRF8P29300HR6(HSR6) 2″x3″ Compact Test Circuit Component Layout
MRF8P29300H
Rev. 3
CUT
OUT
A
REA
VGS
C7
C8
R3
R4
C5
C6
C3
C4
C1
R1
R2
VGS
VDS
C14
C13
C2
C11
C12
VDS
C9
C10
Table 6. MRF8P29300HR6(HSR6) 2″x3″ Compact Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
4.7 pF Chip Capacitors
ATC100A4R7BT150XT
ATC
C3, C4
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C5, C6, C11, C12
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C7, C8, C9, C10
15 pF Chip Capacitors
ATC100A150JT150XT
ATC
C13, C14
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1, R2, R3, R4
10 Chip Resistors
CRCW120610R0JNEA
Vishay
PCB
0.050″, εr = 10.2
RO3010
Rogers
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P29300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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