- 您现在的位置：买卖IC网 > PDF目录98041 > MRF8P9040GNR1 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 PDF资料下载
参数资料
| 型号： | MRF8P9040GNR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1487-05, WB-4 GULL, 4 PIN |
| 文件页数： | 1/23页 |
| 文件大小： | 822K |
| 代理商： | MRF8P9040GNR1 |
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Driver Application — 900 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
920 MHz
18.9
--49.6
940 MHz
19.1
19.5
--50.1
960 MHz
19.1
19.9
--48.8
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point
42 Watts CW
Driver Application — 700 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
728 MHz
19.9
18.7
--49.9
748 MHz
20.1
19.1
--50.0
768 MHz
20.0
19.5
--49.9
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Document Number: MRF8P9040N
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
728--960 MHz, 4.0 W AVG., 28 V
CDMA, W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
(Top View)
RFoutA/VDSA
Figure 1. Pin Connections
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Note: Exposed backside of the package is
the source terminal for the transistors.
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF8P9040NBR1
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF8P9040NR1
32
41
CASE 1487--05, STYLE 1
TO--270 WB--4 GULL
PLASTIC
MRF8P9040GNR1
Freescale Semiconductor, Inc., 2010. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF8S18120HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S18120HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S18260HSR6 | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S18260HR6 | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S19140HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P9040NBR1 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P9040NR1 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P9210NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHz 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P9300HR5 | 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P9300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。