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| 型号： | MRF8S19260HSR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 375J-02, NI-1230S-8, 8 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 483K |
| 代理商： | MRF8S19260HSR6 |
MRF8S19260HR6 MRF8S19260HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multi--carrier base station applications with
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =30 Volts,IDQ =
1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
17.6
33.2
5.9
--36.0
1960 MHz
18.0
33.6
5.8
--35.7
1990 MHz
18.2
34.5
5.7
--34.6
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point
245 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
291
1.48
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 74 W CW, 30 Vdc, IDQ = 1600 mA, 1990 MHz
Case Temperature 91°C, 260 W CW(1),30Vdc,IDQ = 1600 mA, 1990 MHz
RθJC
0.30
0.28
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S19260H
Rev. 0, 8/2010
Freescale Semiconductor
Technical Data
1930--1990 MHz, 74 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S19260HR6
MRF8S19260HSR6
CASE 375I--03
NI--1230--8
MRF8S19260HR6
CASE 375J--02
NI--1230S--8
MRF8S19260HSR6
(Top View)
RFoutA/VDSA
Figure 1. Pin Connections
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA
N.C.
VBWB
18
45
27
36
N.C.
Freescale Semiconductor, Inc., 2010. All rights reserved.
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