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| 型号： | MRF8S26120HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 928K |
| 描述： | FET RF N-CH 2.6GHZ 28V NI780 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 2.7GHz |
| 增益： | 15.6dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 28W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
MRF8S26120HR3 MRF8S26120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQ
= 900 mA, Pout
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2620 MHz
15.5
31.5
6.3
--38.0
2655 MHz
15.5
31.1
6.3
--37.3
2690 MHz
15.6
31.1
6.2
--36.7
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
?
Typical Pout
@ 1 dB Compression Point
?
110 Watts CW
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
Designed for Digital Predistortion Error Correction Systems
?
Optimized for Doherty Applications
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
CW Operation @ TC
=25°C
Derate above 25°C
CW
141
0.78
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 72°C, 28 W CW, 28 Vdc, IDQ
= 900 mA, 2690 MHz
(4),28Vdc,IDQ
= 900 mA, 2690 MHz
Case Temperature 85°C, 110 W CW
RθJC
0.53
0.47
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See
CW operation data in Maximum Ratings table.
Document Number: MRF8S26120H
Rev. 0, 6/2010
Freescale Semiconductor
Technical Data
2620--2690 MHz, 28 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S26120HR3
MRF8S26120HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S26120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S26120HSR3
?
Freescale Semiconductor, Inc., 2010.
All rights reserved.
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| MRF8S26120HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.6GHZ 27W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S26120HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.6GHZ 27W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S26120HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.6GHZ 27W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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