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参数资料
| 型号： | MRF9030MR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | PLASTIC, CASE 1265-08, 2 PIN |
| 文件页数： | 1/16页 |
| 文件大小： | 567K |
| 代理商： | MRF9030MR1 |
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INFORMA
TION
Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free terminations.
MRF9030MR1 MRF9030MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
200_C Capable Plastic Package
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
139
0.93
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.08
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030MR1
MRF9030MBR1
C7 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9030M
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF9030MR1
MRF9030MBR1
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9030MBR1
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF9030MR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
相关PDF资料 |
PDF描述 |
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| MRF9030NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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| MRF9045MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF9045MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF9045NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9030MR1_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9030NR1 | 功能描述:射频MOSFET电源晶体管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9030NR1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9030R1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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