参数资料
型号: MRF9045LSR1
厂商: Freescale Semiconductor
文件页数: 5/11页
文件大小: 591K
描述: IC MOSFET RF N-CHAN NI-360S
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 500
晶体管类型: LDMOS
频率: 945MHz
增益: 18.8dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 350mA
功率 - 输出: 55W
电压 - 额定: 65V
封装/外壳: NI-360S
供应商设备封装: NI-360 短引线
包装: 带卷 (TR)
MRF9045LR1 MRF9045LSR1
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two--Tone Common--Source Amplifier Power Gain
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
18.8
?
dB
Two--Tone Drain Efficiency
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
42
?
%
3rd Order Intermodulation Distortion
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
?
-- 3 2
-- 2 8
dBc
Input Return Loss
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
?
-- 1 4
-- 9
dB
Two--Tone Common--Source Amplifier Power Gain
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
?
18.5
?
dB
Two--Tone Drain Efficiency
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
?
41
?
%
3rd Order Intermodulation Distortion
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
?
-- 3 3
?
dBc
Input Return Loss
(VDD
=28Vdc,Pout
= 45 W PEP, IDQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
?
13
?
dB
Power Output, 1 dB Compression Point
(VDD
=28Vdc,Pout
=45WCW,IDQ
= 350 mA,
f1 = 945.0 MHz)
P1dB
?
55
?
W
Common--Source Amplifier Power Gain
(VDD
=28Vdc,Pout
=45WCW,IDQ
= 350 mA,
f1 = 945.0 MHz)
Gps
?
18
?
dB
Drain Efficiency
(VDD
=28Vdc,Pout
=45WCW,IDQ
= 350 mA,
f1 = 945.0 MHz)
η
?
60
?
%
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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