参数资料
型号: MRF9045LSR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN
文件页数: 1/8页
文件大小: 390K
代理商: MRF9045LSR1
MRF9045LR1 MRF9045LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applica-
tions in 28 volt base station equipment.
Typical Two-Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — -32 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Features
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
MRF9045LR1
Derate above 25°C
MRF9045LSR1
PD
125
0.71
175
1
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
MRF9045LR1
MRF9045LSR1
RθJC
1.4
1.0
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Document Number: MRF9045
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
MRF9045LR1
MRF9045LSR1
945 MHz, 45 W, 28 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF9045LR1
CASE 360C-05, STYLE 1
NI-360S
MRF9045LSR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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