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参数资料
| 型号： | MRF9045NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/12页 |
| 文件大小： | 470K |
| 描述： | IC MOSFET RF N-CHAN TO270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 945MHz |
| 增益： | 19dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 350mA |
| 功率 - 输出： | 45W |
| 电压 - 额定： | 65V |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
N
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NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
960
12
20
?38
50
IRL
IMD
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit
Performance
G
ps
, POWER GAIN (dB)
18
40
17
35
16
?30
19
45
15
?32
14
?34
13
?36
955
950
945
940
935
930
VDD
= 28 Vdc
Pout
= 45 W (PEP)
IDQ
= 350 mA
Two?Tone Measurement
100 kHz Tone Spacing
100
17
21
IDQ
= 525 mA
420 mA
VDD
= 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
350 mA
280 mA
20.5
20
19.5
19
18.5
18
17.5
10
1
0.1
100
?15
IDQ
= 280 mA
350 mA
VDD
= 28 Vdc
?50
f1 = 945 MHz,
?55
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)
IMD,
420 mA
525 mA
?20
?25
?30
?35
?40
?45
10
1
0.1
100
?10
1
7th Order
VDD
= 28 Vdc
IDQ
= 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)
IMD,
3rd Order
5th Order
?20
?30
?40
?50
?60
?70
?80
10
Figure 9. Power Gain and Efficiency versus
Output Power
η
Gps
?10
?18
?14
, DRAIN
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
IRL, INPUT RETURN
LOSS (dB)
?12
?16
110100
20
0
50
12 10η
VDD
= 28 Vdc
IDQ
= 350 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
G
ps
, POWER GAIN (dB)
14
30
10
20
40
Gps
22
16
18
60
, DRAIN EFFICIENCY (%)
η
0.1
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相关代理商/技术参数 |
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|---|---|
| MRF9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET |
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