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参数资料
| 型号： | MRF9080S |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 465A-06, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 220K |
| 代理商： | MRF9080S |
5.2–179
MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
TYPICAL CHARACTERISTICS
(IN MOTOROLA BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
0
5
10
15
20
25
30
35
Pin, INPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
f, FREQUENCY (MHz)
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain and Input Return Loss
versus Frequency
Pin, INPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 8. Output Power and Efficiency versus
Input Power
Figure 9. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
h
Pout
h
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
P
out
,OUTPUT
POWER
(W
ATTS)
850 870
1010
Pout = 20 W
15
16
17
18
19
20
21
0.2
0
1
1.2
16
18
19
20
1
10
100
17
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
1
10
100
17
18
19
20
21
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
1
10
100
17
18
19
20
Figure 10. Output Power and Efficiency versus Input
Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
h
P
out
,OUTPUT
POWER
(W
ATTS)
800 mA
IDQ = 1000 mA
VDD = 26 Vdc
f = 940 MHz
T = 25°C
600 mA
400 mA
IDQ = 600 mA
f = 940 MHz
T = 25°C
VDD = 22 Vdc
30 Vdc
26 Vdc
VDD = 26 Vdc
IDQ = 600 mA
T = 25°C
Gps
IRL
70 W
Pout = 20 W
70 W
890 910 930 950 970 990
1030 1050
-30
-25
-20
-15
-10
-5
0
10
20
30
40
50
60
IRL,
INPUT
RETURN
LOSS
(dB)
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
T = 25°C
120
110
100
90
80
70
60
50
40
30
20
10
0
1.4
1.6
1.8
0.4
0.6
0.8
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
25°C
50°C
85°C
110
100
90
80
70
60
50
40
30
20
10
0
0.2
0
1
1.2
1.4
1.6
1.8
0.4
0.6
0.8
h
Pout
25°C
85°C
25°C
85°C
40
45
50
55
相关PDF资料 |
PDF描述 |
|---|---|
| MRF9085LR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF9085LSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF9085LS | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF9100SR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF9100R3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9080SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9085 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9085LR3 | 功能描述:射频MOSFET电源晶体管 90W 880MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9085LR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9085LR5 | 功能描述:射频MOSFET电源晶体管 90W 880MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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