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参数资料
| 型号： | MRF9100LSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 360K |
| 代理商： | MRF9100LSR3 |
MRF9100LR3 MRF9100LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 26 volt base station equipment.
On-Die Integrated Input Match
Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts
Power Gain @ P1dB — 16.5 dB
Efficiency @ P1dB — 53%
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
100 Watts CW Output Power
Features
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5. +65
Vdc
Gate-Source Voltage
VGS
- 0.5. +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
175
1.0
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
°C/W
Document Number: MRF9100
Rev. 5, 5/2006
Freescale Semiconductor
Technical Data
MRF9100LR3
MRF9100LSR3
900 MHz, 110 W, 26 V
GSM/EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF9100LR3
CASE 465A-06, STYLE 1
NI-780S
MRF9100LSR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
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|---|---|
| MRF9100R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9120 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9120LR3 | 功能描述:射频MOSFET电源晶体管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9120LR5 | 功能描述:射频MOSFET电源晶体管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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