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参数资料
| 型号： | MRF9100SR3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 2/12页 |
| 文件大小： | 395K |
| 代理商： | MRF9100SR3 |
MRF9100 MRF9100R3 MRF9100SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 500
μ
Adc)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 800 mAdc)
V
GS(Q)
3
—
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.19
0.5
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
8
—
S
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.0
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Output Power, 1 dB Compression Point, CW
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 960 MHz)
P
1dB
100
110
—
W
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f = 960 MHz)
G
ps
16
17
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f = 960 MHz)
η
47
51
—
%
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f1 = 921 MHz and 960 MHz,
f2 = 940 MHz)
IRL
—
—
—
–20
–10
—
dB
Third Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 100 W PEP, I
DQ
= 800 mA,
f = Full GSM Band 921–960 MHz, Tone Spacing = 100 kHz)
IMD
—
–30
—
dBc
Output Mismatch Stress
(V
DD
= 26 Vdc, I
DQ
= 800 mA, P
out
= 100 W CW,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of
Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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