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参数资料
| 型号： | MRF9200LR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 469K |
| 代理商： | MRF9200LR3 |
MRF9200LR3 MRF9200LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applica-
tions in 26 volt base station equipment.
Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 26 Volts,
IDQ = 2400 mA, Pout = 40 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 25%
ACPR @ 750 kHz Offset — -46.5 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
625
3.6
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 60°C, 200 W CW
Case Temperature 80°C, 40 W CW
RθJC
0.28
0.34
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF9200L
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF9200LSR3
CASE 465B-03, STYLE 1
NI-880
MRF9200LR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF9210R3 | 功能描述:射频MOSFET电源晶体管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9210R5 | 功能描述:射频MOSFET电源晶体管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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