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参数资料
| 型号： | MRF927T3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 36K SERIAL CONFIGURATION PROM |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/12页 |
| 文件大小： | 165K |
| 代理商： | MRF927T3 |
MRF927T1 MRF927T3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0 mA)
V(BR)CEO
10
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
1.5
—
—
Vdc
Emitter Cutoff Current
(VEB = 1.0 Vdc, IC = 0)
IEBO
—
—
0.1
μ
A
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.5 mA)
hFE
50
—
200
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
0.33
—
pF
Current–Gain Bandwidth Product
(VCE = 3.0 Vdc, IE = 5.0 mA, f = 1.0 GHz)
f
τ
—
8.0
—
GHz
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Figure 3
NFmin
—
1.7
—
dB
Associated Gain at Minimum Noise Figure
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Figure 3
GNF
—
9.8
—
dB
Maximum Unilateral Gain
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
GUmax
—
15
—
dB
Insertion Gain
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
|S212|
—
8.0
—
dB
Noise Resistance
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
RN
—
62
—
Ohms
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