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参数资料
| 型号： | MRF949T1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-75, SC-90, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 298K |
| 代理商： | MRF949T1 |
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MRF949T1
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE TRANSISTORS
f
τ = 9.0 GHz
NFmin = 1.4 dB
ICMAX = 50 mA
VCEO = 10 V
PLASTIC PACKAGE
CASE 463
(SC–90/SC–75, Tape & Reel Only)
1
Order this document by MRF949T1/D
Pin 1. Base
2. Emitter
3. Collector
2
3
ORDERING INFORMATION
Device
Package
MRF949T1
SC–90/SC75
Tape & Reel*
Marking
JL
*3,000 Units per 8 mm, 7 inch reel.
1
MOTOROLA RF/IF DEVICE DATA
NPN Silicon
Low Noise Transistors
Motorola’s MRF949 is a high performance NPN transistor designed for
use in high gain, low noise small–signal amplifiers. The MRF949 is well
suited for low voltage wireless applications. This device features a 9.0 GHz
DC current gain–bandwidth product with excellent linearity.
Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1.0 GHz, 8.0 V, 3.0 mA
High Current Gain–Bandwidth Product, fτ = 9.0 GHz, 6.0 V, 15 mA
Maximum Stable Gain, 19 dB @ 1.0 GHz, 6.0 V, 10 mA
Output Third Order Intercept, Output IP3 = 29 dBm @ 1.0 GHz,
6.0 V, 10 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
10
Vdc
Collector–Base Voltage
VCBO
20
Vdc
Emitter–Base Voltage
VEBO
1.5
Vdc
Power Dissipation @ TC = 75°C
PD(max)
0.144
W
Derate linearly above TC = 75°C at
1.92
mW/
°C
Collector Current – Continuous [Note 3]
IC
50
mA
Storage Temperature
Tstg
–55 to 150
°C
Maximum Junction Temperature
TJ(max)
150
°C
NOTES: 1. Meets Human Body Model (HBM)
≤300 V and Machine Model (MM) ≤75 V.
2. ESD data available upon request.
3. For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θJC
520
°C/W
NOTE:
To calculate the junction temperature use TJ = (PD x R
θJC) + TC. The case
temperature measured on collector lead adjacent to the package body.
Motorola, Inc. 1998
Rev 2
LIFETIME
BUY
LAST
ORDER
25S
EP01
LAST
SHIP
26
MAR02
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相关代理商/技术参数 |
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| MRF951 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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| MRF951V2 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF951V3 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF951V4 | 功能描述:射频双极小信号晶体管 RF Bipolar Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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