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参数资料
| 型号： | MRF957T1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN Silicon Low Noise, High-Frequency Transistors |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 419-02, 3 PIN |
| 文件页数： | 3/16页 |
| 文件大小： | 215K |
| 代理商： | MRF957T1 |
3
MMBR951 MRF957 MRF9511 SERIES
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MRF9511LT1
MMBR951LT1
MMBR951ALT1
MRF957T1
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S21|2
—
—
—
14.5
9.0
—
—
—
—
—
—
—
12.5
7.0
—
—
—
—
—
—
—
13.3
—
10.1
—
—
—
dB
GU max
—
—
—
17
10.5
—
—
—
—
—
—
—
14
8.0
—
—
—
—
—
—
—
14
—
10.8
—
—
—
dB
NFMIN
—
—
—
1.3
2.1
—
—
—
—
—
—
—
1.3
2.1
—
—
—
—
—
—
—
1.5
—
2.0
—
—
—
dB
GNF
—
—
—
14
9.0
—
—
—
—
—
—
—
13
7.5
—
—
—
—
—
—
—
11.8
—
9.0
—
—
—
dB
NF50
—
1.9
2.8
—
1.9
2.8
—
1.9
2.8
dB
|S21|2
(1–|S11|2)(1–|S22|2)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9582NT1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET |
| MRF959T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW NOISE TRANSISTORS |
| MRF962 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| MRF962_07 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| MRF9745T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:HIGH FREQUENCY POWER TRANSISTOR LDMOS FET |
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