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参数资料
| 型号： | MRF9822T1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT |
| 中文描述： | UHF BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 文件页数： | 2/4页 |
| 文件大小： | 68K |
| 代理商： | MRF9822T1 |
MRF9822T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 3.5 V, ID = 150 mA)
VGS(th)
–1.5
–
–0.5
Vdc
Forward Transconductance
(VDS = 6 V, ID = 200 mA)
gfs
–
1.5
–
mhos
Saturation Drain–Current
(VGS = 0.0 V, VDS = 1.5 V)
IDSS
1.8
2.5
–
A
FUNCTIONAL CHARACTERISTICS
Power Gain
(VDD = 3.5 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 850 MHz)
Gps
10.5
11
–
dB
Drain Efficiency
(VDD = 3.5 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 850 MHz)
η
D
65
70
–
%
Figure 1. 850 MHz Test Fixture Schematic
Vgate
INPUT
OUTPUT
0.75
″
x 0.65
″
CERAMIC SUBSTRATE
C6
L1
C7
C8
C9
C10
C11
C12
L3
L4
L2
R1
C1
C2
C3
Z1
Z2
Z3
DUT
Z4
Z5
Z6
C4
C5
C13
C1, C13
C2
C3
C4
C5
C6, C12
C7, C8, C9, C10, C11
L1, L4
1000 pF, ATC “B” Series
2.7 pF, ATC “B” Series
2.7 pF, ATC “B” Series
7.5 pF, ATC “B” Series
33 pF, ATC “B” Series
47
μ
F, Ceramic
0.05
μ
F Chip
VK–200 4 Turn Ferrite Bead
L2
L3
R1
Z1
Z2
Z3, Z4
Z5
Z6
Substrate Material: 0.05, Teflon/Glass,
ε
r = 2.55, 2 oz. cu.
7 Turns, AWG #18, 0.09
″
I.D., Close Wound
3 Ferrite Beads on 1/2
″
AWG #16
680
, 1/8 Watt Leaded
0.075
″
x 0.790
″
Microstrip
0.075
″
x 0.09
″
Microstrip
0.075
″
x 0.25
″
Microstrip
0.075
″
x 0.09
″
Microstrip
0.075
″
x 0.53
″
Microstrip
Table 1. Large Signal Impedance
VDD = 3.5 V, Pin = 20 dBm, IDQ = 150 mA
f
MHz
Zin
Ohms
ZOL*
Ohms
850
5.0 – j6.3
5.5 – j1.2
ZOL* is the conjugate of the optimum load
impedance into which the device output operates
at a given output power, voltage and frequency.
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