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| 型号： | MRFE6S9046GNR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/21页 |
| 文件大小： | 630K |
| 描述： | MOSFET RF N-CH 45W TO-270-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 19dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 300mA |
| 功率 - 输出： | 35.5W |
| 电压 - 额定： | 66V |
| 封装/外壳： | TO-270BB |
| 供应商设备封装： | TO-270 WB-4 鸥翼形 |
| 包装： | 带卷 (TR) |
MRFE6S9046NR1 MRFE6S9046GNR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 920 to 960
MHz. Suitable for CDMA and multicarrier amplifier
applications.
?
Typical GSM Performance: VDD
= 28 Volts, I
DQ
= 300 mA, P
out
=
35.5 Watts CW, f = 960 MHz
Power Gain ? 19 dB
Drain Efficiency ? 57%
?
Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
?
Typical Pout
@ 1 dB Compression Point
45 Watts CW
?
Typical GSM EDGE Performance: VDD
= 28 Volts, I
DQ
= 285 mA,
Pout
= 17.8 Watts Avg., Full Frequency Band (920-960 MHz)
Power Gain ? 19 dB
Drain Efficiency ? 42.5%
Spectral Regrowth @ 400 kHz Offset = -62.5 dBc
Spectral Regrowth @ 600 kHz Offset = -72 dBc
EVM ? 2.1% rms
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
?
225°C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRFE6S9046N
Rev. 0, 5/2009
Freescale Semiconductor
Technical Data
920-960 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1487-05, STYLE 1
TO-270 WB-4 GULL
PLASTIC
MRFE6S9046GNR1
MRFE6S9046NR1
MRFE6S9046GNR1
(Top View)
32RFout/VDS
41RFout/VDS
RFin/VGS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRFE6S9046NR1
PARTS ARE SINGLE-ENDED
?
Freescale Semiconductor, Inc., 2009. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9046NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9060GNR1 | 功能描述:射频MOSFET电源晶体管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9060NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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