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参数资料
| 型号： | MRFE6S9046NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, WB, 4 PIN |
| 文件页数： | 1/21页 |
| 文件大小： | 630K |
| 代理商： | MRFE6S9046NR1 |
MRFE6S9046NR1 MRFE6S9046GNR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier
applications.
Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout =
35.5 Watts CW, f = 960 MHz
Power Gain — 19 dB
Drain Efficiency — 57%
Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
Typical Pout @ 1 dB Compression Point ] 45 Watts CW
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA,
Pout = 17.8 Watts Avg., Full Frequency Band (920-960 MHz)
Power Gain — 19 dB
Drain Efficiency — 42.5%
Spectral Regrowth @ 400 kHz Offset = -62.5 dBc
Spectral Regrowth @ 600 kHz Offset = -72 dBc
EVM — 2.1% rms
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRFE6S9046N
Rev. 0, 5/2009
Freescale Semiconductor
Technical Data
920-960 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1487-05, STYLE 1
TO-270 WB-4 GULL
PLASTIC
MRFE6S9046GNR1
MRFE6S9046NR1
MRFE6S9046GNR1
(Top View)
RFout/VDS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
32
41
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRFE6S9046NR1
PARTS ARE SINGLE-ENDED
Freescale Semiconductor, Inc., 2009. All rights reserved.
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| MRFE6S9060GNR1 | 功能描述:射频MOSFET电源晶体管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9125NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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