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参数资料
| 型号： | MRFE6S9130HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 413K |
| 代理商： | MRFE6S9130HR3 |
MRFE6S9130HR3 MRFE6S9130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
25
5
10
15
20
30
45
5
15
25
35
55
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 27 Watts Avg.
960
940
920
900
880
860
840
20
19.5
70
34
30
26
20
40
50
980
820
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 54 Watts Avg.
960
940
920
900
880
860
840
19
17.5
70
50
41
10
20
40
60
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
15
21
1
IDQ = 1400 mA
1100 mA
Pout, OUTPUT POWER (WATTS) PEP
19
18
17
10
400
20
1
IDQ = 500 mA
Pout, OUTPUT POWER (WATTS) PEP
100
30
40
50
60
10
η
D
,DRAIN
EFFICIENCY
(%)
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
18.5
17.5
16.5
15.5
15
16.5
15.5
14.5
13.5
13
16
950 mA
500 mA
10
700 mA
1400 mA
16
17
18
19
60
30
28
32
17
16
15
14
44
38
30
50
ηD
ACPR
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
700 mA
400
950 mA
1100 mA
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
VDD = 28 Vdc, Pout = 27 W (Avg.), IDQ = 950 mA
NCDMA IS95 Pilot, Sync, Paging, Traffic
Codes 8 Through 13
ALT1
ηD
18
18.5
35
47
0
ALT1
VDD = 28 Vdc, Pout = 54 W (Avg.)
IDQ = 950 mA, NCDMA IS95 Pilot, Sync
Paging, Traffic Codes 8 Through 13
20
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFE6S9130HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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