参数资料
型号: MRFE6S9205HR5
厂商: Freescale Semiconductor
文件页数: 6/12页
文件大小: 404K
描述: MOSFET RF N-CH 58W 28V NI-880
标准包装: 50
晶体管类型: LDMOS
频率: 880MHz
增益: 21.2dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.4A
功率 - 输出: 58W
电压 - 额定: 66V
封装/外壳: NI-880
供应商设备封装: NI-880
包装: 带卷 (TR)
MRFE6S9205HR3 MRFE6S9205HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28
Vdc, IDQ
= 1400
mA, 865-900
MHz Bandwidth
Video Bandwidth @ 220 W PEP Pout
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
VBW
?
10
?
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout
= 58 W Avg.
GF
?
0.315
?
dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ Pout
= 200 W CW
Φ
?
0.59
?
°
Average Group Delay @ Pout
= 200 W CW, f = 880 MHz
Delay
?
4.27
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 200 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
?
26.3
?
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.016
?
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
?
0.006
?
dBm/°C
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