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参数资料
| 型号： | MRFE6VP5600HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 9/13页 |
| 文件大小： | 930K |
| 代理商： | MRFE6VP5600HR6 |
MRFE6VP5600HR6 MRFE6VP5600HSR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
10
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
1000
100
40
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
Note: Each side of device measured separately.
1
57
64
31
Pin, INPUT POWER (dBm) PULSED
Figure 4. Pulsed Output Power versus
Input Power
62
32
33
34
35
36
37
P out
,O
UT
PU
T
POWER
(d
Bm)
PU
LSED
61
58
Actual
Ideal
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
P1dB = 58.0 dBm
(632 W)
60
59
63
P3dB = 58.3 dBm (679 W)
P2dB = 58.2 dBm (664 W)
27
20
90
100
24
70
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
22
20
1000
21
40
60
80
23
25
17
24
0
21
20
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
19
700
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
18
200
400
500
600
VDD =30 V
50 V
22
23
26
25
27
300
35 V
40 V
45 V
20
90
0
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Drain Efficiency versus
Output Power
70
100
200
300
400
500
600
60
30
50
40
80
700
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
20
22
21
100
1000
ηD
25_C
TC =--30_C
85_C
Gps
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
40
60
50
20
30
η
D
,DRA
IN
EF
FI
CIE
NCY
(%
)
85_C
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
VDD =30 V
50 V
35 V
40 V
45 V
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
25
24
23
27
26
70
80
90
Crss
ηD
Gps
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
26
30
40
Coss
--30_C
25_C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP5600HR6_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRFE6VP5600HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP5600HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP61K25GSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230GS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP61K25HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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