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参数资料
| 型号： | MRFE6VP5600HSR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 930K |
| 代理商： | MRFE6VP5600HSR6 |
MRFE6VP5600HR6 MRFE6VP5600HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD =50 Volts,IDQ = 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100 μsec,
20% Duty Cycle)
600 Peak
230
25.0
74.6
--18
CW
600 Avg.
230
24.6
75.2
--17
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +130
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Total Device Dissipation @ TC =25°C
Derate above 25°C
PD
1667
8.33
W
W/°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
ZθJC
RθJC
0.022
0.12
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRFE6VP5600H
Rev. 1, 1/2011
Freescale Semiconductor
Technical Data
1.8--600 MHz, 600 W CW, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRFE6VP5600HR6
MRFE6VP5600HSR6
(Top View)
RFout/VDS
31
Figure 1. Pin Connections
42 RFout/VDS
RFin/VGS
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP5600HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP5600HSR6
PARTS ARE PUSH--PULL
Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
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