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| 型号： | MRFG35010R5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 封装： | ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 424K |
| 代理商： | MRFG35010R5 |
MRFG35010R1 MRFG35010R5
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
10 Watts P1dB @ 3550 MHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
R5 Suffix = 50 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
28.3
0.19
W
W/°C
Gate-Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
33
dBm
Storage Temperature Range
Tstg
-65 to +175
°C
Channel Temperature(1)
Tch
175
°C
Operating Case Temperature Range
TC
-20 to +90
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Class A
Class AB
RθJC
5.3
4.8
°C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C.
Document Number: MRFG35010
Rev. 7, 5/2006
Freescale Semiconductor
Technical Data
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
MRFG35010R1
MRFG35010R5
CASE 360D-02, STYLE 1
NI-360HF
Freescale Semiconductor, Inc., 2006. All rights reserved.
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