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参数资料
| 型号： | MRFG35030R5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 封装： | CASE 1490-01, 2 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 259K |
| 代理商： | MRFG35030R5 |
2
RF Device Data
Freescale Semiconductor
MRFG35030R5
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC Characteristics
Off State Drain Current
(VDS = 3.5 Vdc, VGS = 2 Vdc)
IDSO
—
15
425
Adc
Off State Current
(VDS = 28.5 Vdc, VGS = 2.5 Vdc)
IDSX
—
5
42.5
mAdc
GateSource Cutoff Voltage
(VDS = 3.5 Vdc, IDS = 1 mA/mm)
VGS(th)
0.7
0.85
1.1
Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg., f = 3550 MHz,
Singlecarrier WCDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
10
12
—
dB
Drain Efficiency
ηD
17
21
—
%
Adjacent Channel Power Ratio
ACPR
—
41
36
dBc
Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
30
—
W
1. Measurements made with device in test fixture.
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