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参数资料
| 型号： | MRFIC2006 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 衰减器 |
| 英文描述： | 900 MHz 2 STAGE PA SILICON MONOLITHIC INTEGRATED CIRCUIT |
| 中文描述： | 500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, SO-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 165K |
| 代理商： | MRFIC2006 |
MRFIC2006
2
MOTOROLA RF DEVICE DATA
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
Unit
Supply Voltage Ranges
VCC1, VCC2
Vbias
f
1.8 to 4.0
Vdc
Bias Voltage Range
0 to 5.0
Vdc
RF Frequency Range
500 to 1000
MHz
ELECTRICAL CHARACTERISTICS
(VCC1, VCC2, Vbias = 3.0 V, TA = 25
°
C, f = 900 MHz, Zo = 50
unless otherwise noted)
Characteristics (1)
Min
Typ
Max
Unit
Supply Current — Total
ICC1
ICC2
I Bias
—
—
—
—
46
14
29
3.0
55
—
—
—
mA
mA
mA
mA
Small Signal Gain
19
23
26
dB
Input Return Loss, RF IN Port
—
15
—
dB
Output Return Loss, RF OUT Port
—
15
—
dB
Reverse Isolation
—
35
—
dB
Output Power at 1.0 dB Gain Compression
+12
+15.5
—
dBm
3rd Order Intercept Point (Out)
—
+ 25
—
dBm
5th Order Intercept Point (Out)
—
+ 21
—
dBm
NOTE:
1. All electrical characteristics measured in test circuit schematic shown in Figure 1 below.
Figure 1. Typical Biasing Configuration
C1, C2 — 100 pF Chip Capacitor
C3, C5 — 1.0 nF Chip Capacitor
C4 — 10 nF Chip Capacitor
L1 — 150 nH Chip Inductor
L2 — 10 nH Chip Inductor
R1 — Resistor Optional
RF Connectors — SMA Type
Board Material — Epoxy/Glass
ε
r = 4.5,
Dielectric Thickness = 0.014
″
(0.36 mm)
VCC2
4
+
–
RF IN
50
C1
DUT
C2
RF OUT
50
3
2
1
5
6
7
8
VCC1
+
–
Vbias
+
–
C3
L1
R1
C4
C5
L2
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