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参数资料
| 型号： | MRT100KP260CATR |
| 厂商： | MICROSEMI CORP-IRELAND |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 100000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 5A, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 260K |
| 代理商： | MRT100KP260CATR |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01012 Rev A, August 2010
High Reliability Product Group
Page 1 of 5
DEVICES
MRT100KP40A thru MRT100KP400CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 100 kW @ 6.4/69 s
Fast response with less than 5ns turn-on time
Preferred 100kW TVS for aircraft power bus protection
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices
available by adding “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Protection from high power switching transients, induced RF, and lightning threats with
comparatively small package size (0.25 inch diameter)
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 s) on all
devices
Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 s) on device
types MRT100KP33A or CA up to MRT100KP260A or CA
Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 s) on all
devices
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 s) on
device types MRT100KP33A or CA up to MRT100KP64A or CA
Consult Factory for other voltages with similar Peak Pulse Power capabilities
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 C: 100 kW at @ 6.4/69 s in Figure 8 (also see Figures 1
and 2)
impulse repetition rate (duty factor) of 0.005 %
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
C to +150 °C
Thermal Resistance:
17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when
mounted on FR4 PC board with 4 mm
2 copper pads (1 oz ) and track width 1 mm, length 25
mm
Steady-state power dissipation: 7 Watts @ TL = 27.5 °C or 1.61 Watts at TA = 25 °C when
mounted on FR4 PC Board described above for thermal resistance
Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only
Solder temperatures: 260 °C for 10 s (maximum)
CASE 5A
Unidirectional and Bidirectional
Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 40 to 400 V standoff voltages (VWM)
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