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| 型号： | MRT100KP60AE3 |
| 厂商： | MICROSEMI CORP-IRELAND |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 100000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 260K |
| 代理商： | MRT100KP60AE3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01012 Rev A, August 2010
High Reliability Product Group
Page 5 of 5
GRAPHS Cond.
t
– time
t
– time
t - Time
Note: frequency is 1MHz
FIGURE 7
– Waveform 3
FIGURE 8
– Waveform 4
FIGURE 9
– Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4
s. Equivalent peak pulse power at each of
the pulse widths represented in RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1
herein as well as MicroNotes 104 and 120 (found on www.microsemi.com) and are listed below.
WAVEFORM
NUMBER
PULSE
WIDTH
s
PEAK PULSE
POWER
kW
Peak Pulse Current Conversion Factor
* from Rated IPP at 6.4/69 s
3
4
340
3.40x
4
6.4/69
100
1.00x
5A
40/120
70
0.70x
* Multiply by the conversion factor shown with reference to the maximum rated IPP in the Electrical Characteristics Table on page 2.
NOTE 1:
High current fast rise-time transients of 250 ns or less can more than triple the VC from parasitic inductance effects
(V= -Ldi/dt) compared to the clamping voltage shown in the initial Electrical Characteristics as also described in
Figures 5 and 6 herein
NOTE 2:
Also see MicroNotes 127, 130, and 132 on www.microsemi.com for further information on Transient Voltage
Suppressors with reference to aircraft industry specification RTCA/DO-160E.
t
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