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参数资料
| 型号： | MS1076E |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.500 INCH, PLASTIC, M174, FM-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | MS1076E |
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
DESCRIPTION:
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor
designed primarily for SSB and VHF communications. This
device utilizes an emitter ballasted die geometry for maximum
ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCBO
Collector - Base Voltage
70
V
VCEO
Collector - Emitter Voltage
35
V
VEBO
Emitter - Base Voltage
4.0
V
IC
Device Current
16
A
PDISS
Power Dissipation
250
W
TJ
Junction Temperature
+200
°C
TSTG
Storage Temperature
- 65 to +150
°C
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
0.7
°C/W
Rev A: October 2009
Features
30 MHz
28 VOLTS
GOLD METALLIZATION
P
OUT = 220 W PEP
G
P = 12 dB GAIN MINIMUM
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
相关PDF资料 |
PDF描述 |
|---|---|
| MS1076D | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076G | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076I | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076H | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076C | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MS1077 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF & MICROWAVE TRANSISTORS |
| MS1078 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MS1079 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS108 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 80V 1A 2PIN DO-41 - Bulk |
| MS108/TR12 | 制造商:Microsemi Corporation 功能描述:1.0A, 80V, VF=0.81V - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1A 80V DO-41 |
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