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参数资料
| 型号： | MS115 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 104K |
| 代理商： | MS115 |
PAGE . 2
STAD-APR.22.2009
MS14~MS120
PRELIMINAR
Y
RATING AND CHARACTERISTIC CURVES
Fig.1-FORWARD CURRENT DERATING CURVE
PEAK
FOR
W
ARD
S
URGE
C
URRENT
,
AMPERES
NO. OF CYCLE AT 60Hz
A
VERAGE
F
OR
W
A
RD
RECTIFIED
CURRENT
AMPERES
LEAD TEMPERATURE, C
o
110
100
0
5
10
15
20
25
30
Fig.2- MAXIMUM NON-REPETITIVEPEAKFORWARD
SURGE CURRENT
1.0
.50
0
SINGLEPHASEHALFWAVE60Hz
RESISTIVEORINDUCTIVELOAD
P.C.B MOUNTED
ON 0.2 X
X
0.2"( 5.0 5.0mm)
COPPERPADAREAS
.25
.75
0
75
100
125
150
175
25
50
=40V
= 45-200V
Fig.3-TYPICAL REVERSE CHARACTERISTIC
20
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
40
60
80
100
T=25 C
J
O
PERCENT OF RATED PEAK REVERSE VOLTAGE ,%
REVERSE
CURRENT
,
Am
V
=40-60V
V
=80-200V
RRM
T=75 C
J
O
T =125 C
J
O
Fig.4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
FORWARD VOLTAGE, VOLTS
FOR
W
ARD
CURRENT
,AMPERES
0.01
0.1
1.0
10
0.2
0.4
0.6
0.8
1.0
1.2
80-100V
0-
1
00V
T= 2
2
5C
A
O
4
50-60V
0-45
5
V
相关PDF资料 |
PDF描述 |
|---|---|
| MS120T/R13 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| MS19T/R7 | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC |
| MS14AT/R7 | 1 A, 45 V, SILICON, SIGNAL DIODE, DO-214AC |
| MS14T/R7 | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AC |
| MS503-TS01-TP | 5 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MS115F | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| MS116-0,4 | 制造商:ABB Control 功能描述:MS116 - 0,4 |
| MS116-1,0 | 制造商:ABB Control 功能描述:MS116 - 1,0 |
| MS116-1.6 | 制造商:ABB Low Voltage Products and Systems 功能描述:3P MMP 1.0-1.6A RANGE |
| MS116-10 | 制造商:ABB Control 功能描述:3P MMP 6.3-10.0A RANGE |
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