参数资料
型号: MS1536
元件分类: 功率晶体管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封装: M169, 6 PIN
文件页数: 1/4页
文件大小: 119K
代理商: MS1536
MS1536
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
F
DESCRIPTION:
The MS1536 is a 28V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications.
This device utilizes diffused emitter resistors to achieve
10:1 VSWR capability under specified operating conditions.
Internal input matching provides optimum power gain and
efficiency over the 225 – 400 MHz band.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
55
V
VCES
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
10
A
PDISS
Power Dissipation
175
W
TSTG
Storage Temperature
-65 to +150
°°C
TJ
Junction Temperature
+200
°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
1.0
°°C/W
Features
900 MHz
24 VOLTS
P
OUT
= 60 WATTS
G
P = 7.0 dB MINIMUM
INPUT AND OUTPUT MATCHED
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
800 / 900 MHz APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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