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参数资料
| 型号： | MS2212 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.310 X 0.310 INCH, HERMETIC SEALED, M222, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 187K |
| 代理商： | MS2212 |
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2212
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°°C)
Symbol
Parameter
Value
Unit
VCC
Collector-Supply Voltage*
32
V
IC
Device Current*
1.8
A
PDISS
Power Dissipation*
50
W
TJ
Junction Temperature
+250
°°C
TSTG
Storage Temperature
- 65 to + 200
°°C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
3.0
°°C/W
* Applies only to rated RF operation.
Features
960-1215 MHz
GOLD METALLIZATION
EMITTER SITE BALLASTED
Pout = 15W
Gp = 8.1 dB MINIMUM
INTERNAL IMPEDANCE MATCHING
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
COMMON BASE CONFIGURATION
DDESCRIPTION:
ESCRIPTION:
The MS2212 is designed for specialized avionics applications, such
as JTIDS, where maximum performance is required under a variety of
pulse formats. Internal impedance matching provides superior broad
band performance.
The MS2212 utilizes gold metallization and emitter ballasting to
provide superior reliability and consistent performance under the
most rugged pulse conditions.
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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