参数资料
型号: MS2228
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN
文件页数: 1/5页
文件大小: 163K
代理商: MS2228
MS2228
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
DESCRIPTION:
The MS2228 device is a high power Class C transistor specifically
designed for L-Band Avionics transponder/interrogator pulsed
output and driver applications.
This device is capable of operation over a wide range of pulse widths,
duty cycles, and is capable of withstanding 10:1 output VSWR at
rated RF conditions. Internal input and output matching provide
optimum performance and product consistency.
AABSOLUTE MAXIMUM RATINGS
BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
175
W
IC
Device Current
5.4
A
Vcc
Collector-Supply Voltage
55
V
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.86
°°C/W
Features
1090 MHz
50 VOLTS
P
OUT = 75 WATTS
G
P = 9.2 dB MINMUM
10:1 VSWR CAPABILITY
COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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